STP3481
P Channel Enhancement Mode MOSFET
-5.2A
DESCRIPTION
The STP3481 is the P-Channel logic enhancement mode power field effect transistors
are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery powered circuits, and
low in-line power loss are needed in a very small outline surface mount package.
FEATURE
PIN CONFIGURATION
TSOP-6P
z
z
z
z
z
-30V/-5.2A, RDS(ON) = 55m-ohm
@VGS = -10V
-30V/-4.2A, RDS(ON) = 75m-ohm
@VGS = -4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
TSOP-6P package design
1.2.5.6.Drain 3.Gate 4.Source
PART MARKING
TSOP-6P
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
STP3481S6RG
TSOP-6P
81YA
※ Process Code : A ~ Z ; a ~ z
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
STANSON [ STANSON TECHNOLOGY ]
