STP3467
P Channel Enhancement Mode MOSFET
-5.2A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static
Symbol
Condition
Min
Typ
Max Unit
Drain-Source Breakdown
Voltage
V(BR)DSS
-20
V
VGS=0V,ID=-250uA
Gate Threshold Voltage
VGS(th)
IGSS
-0.35
-0.8
V
VDS=VGS,ID=-250uA
VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
Gate Leakage Current
±100 nA
-1
Zero Gate Voltage Drain
Current
IDSS
uA
VDS=-20V,VGS=0V
-5
TJ=55℃
On-State Drain Current
ID(on)
V
DS≦-5V,VGS=-10V
-6
A
0.075 0.090
0.090 0.110
0.120 0.140
-10
VGS=-10V,ID=-5.2A
VGS=-4.5V,ID=-4.2A
VGS=-1.8V,ID=-1.7A
Ω
Drain-source On-Resistance RDS(on)
Forward Transconductance
gfs
VSD
S
V
VDS=-5.0V,ID=-2.8A
IS=-1.5A,VGS=0V
Diode Forward Voltage
Dynamic
-0.8
-1.2
Total Gate Charge
Qg
4.8
1.0
8
VDS=-6V,VGS=-4.5V,
VDS=-2.8A
Gate-Source Charge
Qgs
nC
Gate-Drain Charge
Input Capacitance
Qgd
1.0
Ciss
485
Output Capacitance
Coss
Crss
85
40
VDS=-6V,VGS=0,
f=1MHz
pF
Reverse Transfer
Capacitance
Turn-On Time
Td(on)
tr
Td(off)
tf
10
15
18
15
15
25
25
20
VDD=-6V,
R =6Ω, VGEN=-4.5V
ns
L
Turn-Off Time
R =6Ω
G
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3467 2008. V1
STANSON [ STANSON TECHNOLOGY ]
