STP3467
P Channel Enhancement Mode MOSFET
-5.2A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted )
Parameter
Drain-Source Voltage
Symbol
VDSS
Typical
-20
Unit
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (TJ=150℃) TA=25℃
TA=70℃
-5.2
-4.2
A
ID
Pulsed Drain Current
IDM
IS
-20
A
A
Continuous Source Current (Diode Conduction)
-1.7
Power Dissipation
TA=25℃
TA=70℃
2.0
1.3
W
PD
Operation Junction Temperature
Storage Temperature Range
TJ
-55/150
℃
℃
TSTG
RθJA
-55/150
90
Thermal Resistance-Junction to Ambient
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3467 2008. V1
STANSON [ STANSON TECHNOLOGY ]
