STN9926AA
Dual N Channel Enhancement Mode MOSFET
6.0A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250uA
VDS=VGS,ID=250 uA
20
V
V
Gate Threshold Voltage
0.6
1.2
±
±
100
VDS=0V,VGS= 12V
Gate Leakage Current
nA
VDS=20V,VGS=0V
VDS=20V,VGS=0V
1
5
IDSS
TJ=55
Zero Gate Voltage Drain
Current
℃
uA
A
On-State Drain Current
ID(on)
VDS
≦5V,VGS=4.5V
6
=
VGS 4.5V, ID=6.0A
0.024 0.030
0.032 0.042
Ω
Drain-source On-Resistance
RDS(on)
=2
VGS .5V, ID=5.0A
Forward Tran Conductance
Diode Forward Voltage
Dynamic
VDS=5.0V,ID=3.6A
IS=1.7A,VGS=0V
10
S
V
g
fs
VSD
0.8 1.2
Total Gate Charge
Qg
Qgs
Qgd
2.0
2.5
2.1
VDS=10V,VGS=4.5V
Gate-Source Charge
≣
ID 6.0A
nC
pF
Gate-Drain Charge
Input Capacitance
Ciss
Coss
Crss
565
84
VDS=8.0V,VGS=0V
f=1MHz
Output Capacitance
Reverse TransferCapacitance
22
10
14
td(on)
Turn-On Time
Turn-Off Time
Ω
VDD=10V,RL=6
tr
16
33
3
20
40
10
ID=1A,VGEN=4.5V
nS
Ω
RG=6
td(off)
tf
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN9926AA 2007. V1
STANSON [ STANSON TECHNOLOGY ]
