STN9926AA
Dual N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer
Li-ion Battery , power management and other battery powered circuits where high-side
switching .
FEATURE
PIN CONFIGURATION
SOP-8
z
z
z
z
z
20V/6.0A, RDS(ON) = 30mΩ
@VGS = 4.5V
20V/5.0A, RDS(ON) = 42mΩ
@VGS = 2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
PART MARKING
SOP-8
ORDERING INFORMATION
Part Number
Package
SOP-8
Part Marking
STN9926
STN9926AAS8RG
STN9926AAS8TG
SOP-8
STN9926
※ Process Code : A ~ Z ; a ~ z
※ STN9926AAS8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
※ STN9926AAS8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN9926AA 2007. V1
STANSON [ STANSON TECHNOLOGY ]
