STN6335
Dual N Channel Enhancement Mode MOSFET
0.95A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown
Voltage
V(BR)DSS
20
V
VGS=0V,ID=250uA
Gate Threshold Voltage
VGS(th)
IGSS
0.35
1.0
V
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=20V,VGS=0V
Gate Leakage Current
±100 nA
1
Zero Gate Voltage Drain
Current
IDSS
uA
5
VDS=20V,VGS=0V
TJ=55℃
On-State Drain Current
ID(on)
V
DS≦4.5V,VGS=5V
2
A
260
320
420
2.6
380
VGS=4.5V,ID=0.95A
VGS=2.5V,ID=0.75A
VGS=1.8V,ID=0.65A
Drain-source On-Resistance
RDS(on)
mΩ
450
800
S
Forward Transconductance
Diode Forward Voltage
gfs
VDS=10V,ID=1.2A
IS=0.5A,VGS=0V
VSD
0.8
1.2
V
DYNAMIC
Total Gate Charge
Qg
1.2
1.5
nC
pF
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
0.2
0.3
VDS=10V,VGS=4.5V,VDS=0.7A
Input Capacitance
Ciss
Coss
Crss
110
34
VDS=10V,VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
16
Turn-On Time
Td(on)
tr
Td(off)
tf
5
8
10
1.2
10
nS
15
18
2.8
VDD=10V, RL=10Ω, ID=1.0A,
VGEN=4.5V, RG=6Ω
Turn-Off Time
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN6335 2008. V1
STANSON [ STANSON TECHNOLOGY ]
