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STN6335 参数 Datasheet PDF下载

STN6335图片预览
型号: STN6335
PDF下载: 下载PDF文件 查看货源
内容描述: STN6335是采用高密度, DMOS沟槽技术生产的双N沟道增强型功率场效应晶体管。 [STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 6 页 / 843 K
品牌: STANSON [ STANSON TECHNOLOGY ]
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STN6335  
Dual N Channel Enhancement Mode MOSFET  
0.95A  
ABSOULTE MAXIMUM RATINGS (Ta = 25Unless otherwise noted )  
Parameter  
Symbol  
VDSS  
Typical  
20  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGSS  
±12  
1.2  
V
TA=25℃  
TA=80℃  
A
Continuous Drain Current (TJ=150)  
ID  
0.9  
4
Pulsed Drain Current  
IDM  
IS  
A
A
Continuous Source Current (Diode Conduction)  
0.6  
Power Dissipation  
TA=25℃  
TA=70℃  
PD  
0.35  
0.19  
W
Operation Junction Temperature  
Storage Temperature Range  
TJ  
-55/150  
TSTG  
RθJA  
-55/150  
Thermal Resistance-Junction to  
Ambient  
T10sec  
360  
400  
/W  
Steady State  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
http://www.stansontech.com  
STN6335 2008. V1