ST7407
P Channel Enhancement Mode MOSFET
-3.4A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
-20
V
V
-0.35
Gate Threshold Voltage
-0.8
±
±
VDS=0V,VGS= 12V
100
-1
Gate Leakage Current
nA
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
Zero Gate Voltage Drain
Current
IDSS
uA
A
-5.0
℃
TJ=55
≦
VDS -5V,VGS=-4.5V
≦
VDS -5V,VGS=-2.5V
-6
-3
On-State Drain Current
ID(on)
VGS=-4.5V,ID=-3.4A
VGS=-2.5V,ID=-2.4A
VGS=-1.8V,ID=-1.8A
0.090 0.100
0.115 0.125
0.150 0.170
Ω
Drain-source On-Resistance
RDS(on)
Forward Transconductance
Diode Forward Voltage
gfs
VDS=-5V,ID=-2.8V
IS=-1.6A,VGS=0V
6.0
S
V
VSD
-0.8 -1.2
Dynamic
Total Gate Charge
Gate-Source Charge
Qg
Qgs
Qgd
4.8 8.0
1.0
VDS=-6V
VGS=-4.5V
nC
pF
≣
ID -2.8A
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
1.0
Ciss
Coss
485
85
VDS=-6.0V
VGS=0V
F=1MHz
Crss
40
10
16
VDD=-6V
RL=6
ID=-1.0A
VGEN=-4.5V
td(on)
Turn-On Time
Turn-Off Time
Ω
tr
13
18
15
23
25
20
nS
td(off)
tf
Ω
RG=6
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST7407 2006. V1
STANSON [ STANSON TECHNOLOGY ]
