ST7407
P Channel Enhancement Mode MOSFET
-3.4A
DESCRIPTION
The ST7407 is the P-Channel logic enhancement mode power field effect transistors It
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone,
notebook computer power management and other battery powered circuits where
high-side switching, and low in-line power loss are needed in a very small outline
surface mount package.
FEATURE
PIN CONFIGURATION
SOT-323 (SC-70)
z
z
z
z
z
z
-20V/-3.4A, RDS(ON) = 100m-ohm
@VGS = -4.5V
-20V/-2.4A, RDS(ON) = 125m-ohm
@VGS = -2.5V
-20V/-1.8A, RDS(ON) = 170m-ohm
@VGS = -1.8V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
3
D
G
1
S
2
SOT-323 (SC-70) package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-323 (SC-70)
3
07YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST7407S32RG
SOT-323
07YA
※ Process Code : A ~ Z ; a ~ z
※ ST7407S32RG
S32 : SOT-323 ; R : Tape Reel ; G : Pb – Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST7407 2006. V1
STANSON [ STANSON TECHNOLOGY ]
