ST3407
P Channel Enhancement Mode MOSFET
-3.6A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=-250uA
-30
V
V
Gate Threshold Voltage
Gate Leakage Current
VDS=VGS,ID=-250uA -1.0
-3.0
±
±
VDS=0V,VGS= 20V
100
-1
nA
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
Zero Gate Voltage Drain
Current
IDSS
uA
A
-9.5
℃
TJ=55
≦-
VDS 5V,VGS=-10V
On-State Drain Current
ID(on)
RDS(on)
gfs
-10
VGS=-10.0V,ID=-4.0A
VGS=-4.5V,ID=-3.2A
45
60
60
80
Ω
m
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
VDS=-5.0V,ID=-4.0A
IS=-1.0A,VGS=0V
10
S
VSD
-0.8 -1.2
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
14
1.9
3.7
21
VDS=-15V
VGS=-10V
nC
pF
≡
ID -4.0A
Input Capacitance
Ciss
Coss
Crss
540
131
105
VDS=-15V
VGS=0V
F=1MHz
Output Capacitance
Reverse Transfer Capacitance
10
16
VDD=-15V
td(on)
Turn-On Time
Turn-Off Time
Ω
RL=15
tr
16
32
21
25
50
32
ID=-1.0A
VGEN=-10V
nS
td(off)
tf
Ω
RG=6
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3407 2006. V1
STANSON [ STANSON TECHNOLOGY ]
