ST3407
P Channel Enhancement Mode MOSFET
-3.6A
℃
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Symbol
VDSS
VGSS
ID
Typical
Unit
Drain-Source Voltage
-30
V
V
±
20
Gate-Source Voltage
TA=25℃
℃
-3.6
-3.0
℃
Continuous Drain CurrentTJ=150
Pulsed Drain Current
)
A
TA=70
IDM
-15
A
Continuous Source Current (Diode Conduction)
IS
-1.0
A
TA=25℃
℃
1.25
0.8
Power Dissipation
PD
W
℃
℃
TA=70
Operation Junction Temperature
Storage Temperature Range
TJ
150
-55/150
120
TSTG
RθJA
℃
/W
Thermal Resistance-Junction to Ambient
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3407 2006. V1
STANSON [ STANSON TECHNOLOGY ]
