ST2301M
P Channel Enhancement Mode MOSFET
-3.0A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
-20
V
V
-0.48
Gate Threshold Voltage
-1.5
±
±
VDS=0V,VGS= 12V
100
-1
Gate Leakage Current
nA
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
Zero Gate Voltage Drain
Current
IDSS
uA
-10
℃
TJ=55
≦
VDS -5V,VGS=-4.5V
≦
VDS -5V,VGS=-2.5V
-6
-3
On-State Drain Current
ID(on)
A
VGS=-4.5V,ID=-2.8A
VGS=-2.5V,ID=-2.0A
0.135
0.220
Ω
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
RDS(on)
gfs
VDS=-5V,ID=-2.8V
IS=-1.6A,VGS=0V
6.5
S
V
VSD
-0.8 -1.2
Dynamic
Total Gate Charge
Gate-Source Charge
Qg
Qgs
Qgd
4.8
0.75
1.4
8
VDS=-6V
VGS=-4.5V
nC
pF
≣
ID -2.8A
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Ciss
Coss
35
150
VDS=-6V
VGS=0V
F=1MHz
Crss
60
10
20
VDD=-6V
td(on)
Turn-On Time
Turn-Off Time
Ω
RL=6
tr
32
38
30
45
55
50
ID=-1A
nS
VGEN=-4.5V
td(off)
tf
Ω
RG=6
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2301M 2007. V1
STANSON [ STANSON TECHNOLOGY ]
