ST2301M
P Channel Enhancement Mode MOSFET
-3.0A
℃
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
ID
Typical
Unit
V
-20
±
12
V
TA=25℃
-2.5
-1.5
℃
Continuous Drain CurrentTJ=150 )
A
℃
TA=70
Pulsed Drain Current
IDM
-10
A
Continuous Source Current (Diode Conduction)
IS
-1.6
A
TA=25℃
1.25
0.8
Power Dissipation
PD
W
℃
℃
℃
TA=70
Operation Junction Temperature
Storgae Temperature Range
TJ
150
-55/150
120
TSTG
℃
/W
Rθ
Thermal Resistance-Junction to Ambient
JA
2
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2301M 2007. V1
STANSON [ STANSON TECHNOLOGY ]
