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SST39LF200A-45-4C-EK 参数 Datasheet PDF下载

SST39LF200A-45-4C-EK图片预览
型号: SST39LF200A-45-4C-EK
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位/ 4兆位/ 8兆位( X16 )多用途闪存 [2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 30 页 / 339 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash  
SST39LF200A / SST39LF400A / SST39LF800A  
SST39VF200A / SST39VF400A / SST39VF800A  
Data Sheet  
TABLE 10: DC OPERATING CHARACTERISTICS  
VDD = 3.0-3.6V FOR SST39LF200A/400A/800A AND 2.7-3.6V FOR SST39VF200A/400A/800A  
Limits  
Symbol Parameter  
Min  
Max Units Test Conditions  
Address input = VIL/VIH, at f=1/TRC Min.,  
IDD  
Power Supply Current  
VDD=VDD Max.  
Read  
30  
30  
20  
1
mA  
mA  
µA  
µA  
µA  
CE#=OE#=VIL,WE#=VIH, all I/Os open  
CE#=WE#=VIL, OE#=VIH  
CE#=VIHC, VDD = VDD Max.  
VIN =GND to VDD, VDD = VDD Max.  
VOUT =GND to VDD, VDD = VDD Max.  
VDD = VDD Min.  
Program and Erase  
Standby VDD Current  
Input Leakage Current  
Output Leakage Current  
Input Low Voltage  
Input High Voltage  
Input High Voltage (CMOS)  
Output Low Voltage  
Output High Voltage  
ISB  
ILI  
ILO  
10  
0.8  
VIL  
VIH  
VIHC  
VOL  
VOH  
0.7VDD  
V
V
V
V
VDD = VDD Max.  
VDD-0.3  
VDD = VDD Max.  
0.2  
IOL = 100 µA, VDD = VDD Min.  
IOH = -100 µA, VDD = VDD Min.  
VDD-0.2  
T10.5 360  
TABLE 11: RECOMMENDED SYSTEM POWER-UP TIMINGS  
Symbol  
Parameter  
Minimum  
100  
Units  
1
TPU-READ  
Power-up to Read Operation  
Power-up to Program/Erase Operation  
µs  
µs  
1
TPU-WRITE  
100  
T11.0 360  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
TABLE 12: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)  
Parameter  
Description  
Test Condition  
VI/O = 0V  
Maximum  
1
CI/O  
I/O Pin Capacitance  
Input Capacitance  
12 pF  
6 pF  
1
CIN  
VIN = 0V  
T12.0 360  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
TABLE 13: RELIABILITY CHARACTERISTICS  
Symbol  
Parameter  
Endurance  
Data Retention  
Latch Up  
Minimum Specification  
Units  
Test Method  
1
NEND  
10,000  
100  
Cycles JEDEC Standard A117  
1
TDR  
Years  
mA  
JEDEC Standard A103  
JEDEC Standard 78  
1
ILTH  
100 + IDD  
T13.1 360  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
©2001 Silicon Storage Technology, Inc.  
S71117-04-000 6/01 360  
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