512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
AC CHARACTERISTICS
TABLE 11: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 4.5-5.5V
(T
A
= 0°C to +70°C (Commercial))
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
0
0
0
25
25
Min
70
70
70
35
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
T11.3 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: P
ROGRAM
/E
RASE
C
YCLE
T
IMING
P
ARAMETERS FOR
SST27SF512
Symbol
T
AS
T
AH
T
PRT
T
VPS
T
VPH
T
PW
T
EW
T
DS
T
DH
T
VR
T
ART
T
A9S
T
A9H
Parameter
Address Setup Time
Address Hold Time
OE#/V
PP
Pulse Rise Time
OE#/V
PP
Setup Time
OE#/V
PP
Hold Time
CE# Program Pulse Width
CE# Erase Pulse Width
Data Setup Time
Data Hold Time
OE#/V
PP
and A
9
Recovery Time
A
9
Rise Time to 12V during Erase
A
9
Setup Time during Erase
A
9
Hold Time during Erase
Min
1
1
50
1
1
20
100
1
1
1
50
1
1
Max
Units
µs
µs
ns
µs
µs
µs
ms
µs
µs
µs
ns
µs
µs
T12.0 1152
30
500
©2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
9
SST [ SILICON STORAGE TECHNOLOGY, INC ]
