1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF032
Advance Information
The SST26WF032 Serial Quad I/O™ (SQI™) flash device utilizes a 4-bit mul-
tiplexed I/O serial interface to boost performance while maintaining the com-
pact form factor of standard serial flash devices. Operating at frequencies
reaching 80 MHz, the SST26WF032 enables minimum latency execute-in-
place (XIP) capability without the need for code shadowing on an SRAM. The
device’s high performance and small footprint make it the ideal choice for
mobile handsets, Bluetooth headsets, optical disk drives, GPS applications
and other portable electronic products. Further benefits are achieved with
SST’s proprietary, high-performance CMOS SuperFlash® technology, which
significantly improves performance and reliability, and lowers power consump-
tion for high bandwidth, compact designs.
Features:
• Single Voltage Read and Write Operations
– 1.65-1.95V
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Four 8 KByte top and bottom parameter overlay blocks
– Two 32 KByte top and bottom overlay blocks
– Uniform 64 KByte overlay blocks
- SST26WF032 – 62 blocks
• Serial Interface Architecture
– Nibble-wide multiplexed I/O’s with SPI-like serial com-
mand structure
- Mode 0 and Mode 3
– Single-bit, SPI backwards compatible
- Read, High-Speed Read, and JEDEC ID Read
• Write-Suspend
– Suspend Program or Erase operation to access another
block/sector
• High Speed Clock Frequency
– 80 MHz
- 320 Mbit/s sustained data rate
• Software Reset (RST) mode
• Software Write Protection
– Individual Block-Locking
- 64 KByte blocks, two 32 KByte blocks, and eight 8
KByte parameter blocks
– Write Lock, Read Lock, and Lockdown options
• Burst Modes
– Continuous linear burst
– 8/16/32/64 Byte linear burst with wrap-around
• Superior Reliability
– Endurance: 100,000 Cycles
– Greater than 100 years Data Retention
• Security ID
– One-Time Programmable (OTP) 256 bit, Secure ID
- 64 bit unique, factory pre-programmed identifier
- 192 bit user-programmable
• Low Power Consumption:
– Active Read current: 12 mA (typical @ 80 MHz)
– Standby Current: 8 µA (typical)
• Temperature Range
– Industrial: -40°C to +85°C
• Fast Erase and Byte-Program:
– Chip-Erase time: 35 ms (typical)
– Sector-/Block-Erase time: 18 ms (typical)
• Packages Available
– 8-contact WSON (6mm x 5mm)
– 8-lead SOIC (200 mil)
• Page-Program
– 256 Bytes per page
– Fast Page Program time in 1 ms (typical)
• All devices are RoHS compliant
• End-of-Write Detection
– Software polling the BUSY bit in status register
©2010 Silicon Storage Technology, Inc.
www.sst.com
S71409-01-000
01/10
SST [ SILICON STORAGE TECHNOLOGY, INC ]
