8Mbit 1.8V SPI Serial Flash
SST25WF080
SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory
Advance Information
FEATURES:
• Single Voltage Read and Write Operations
– 1.65-1.95V
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
– 75 MHz
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Ultra-Low Power Consumption:
– Active Read Current: 2 mA (typical @ 33 MHz)
– Standby Current: 5 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
– Uniform 64 KByte overlay blocks
• Fast Erase and Byte-Program:
– Chip-Erase Time: 35 ms (typical)
– Sector-/Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 14 µS (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software polling the BUSY bit in Status Register
– Busy Status readout on SO pin
• Reset Pin (RST#) or Programmable Hold Pin
(HOLD#) option
– Hardware Reset pin as default
– Hold pin option to suspend a serial sequence
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Temperature Range
– Industrial: -40°C to +85°C
• Packages Available
– 8-lead SOIC (150 mils)
– 8-bump XFBGA
• All devices are RoHS compliant
PRODUCT DESCRIPTION
The SST25WF080 is a member of the Serial Flash 25
Series family and features a four-wire, SPI-compatible
interface that allows for a low pin-count package which
occupies less board space and ultimately lowers total sys-
tem costs. SST25WF080 SPI serial flash memory is manu-
factured with SST proprietary, high-performance CMOS
SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST25WF080 significantly improves performance and
reliability, while lowering power consumption. The device
writes (Program or Erase) with a single power supply of
1.65-1.95V for SST25WF080. The total energy consumed
is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the Super-
Flash technology uses less current to program and has a
shorter erase time, the total energy consumed during any
Erase or Program operation is less than alternative flash
memory technologies.
The SST25WF080 is offered in both an 8-lead, 150 mils
SOIC package and an 8-bump XFBGA package. See Fig-
ures 2 and 3 for the pin assignments.
©2010 Silicon Storage Technology, Inc.
S71203-03-000
04/10
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
SST [ SILICON STORAGE TECHNOLOGY, INC ]
