欢迎访问ic37.com |
会员登录 免费注册
发布采购

SST25VF064C-80-4I-Q2AE 参数 Datasheet PDF下载

SST25VF064C-80-4I-Q2AE图片预览
型号: SST25VF064C-80-4I-Q2AE
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位的SPI串行双I / O闪存 [64 Mbit SPI Serial Dual I/O Flash]
分类和应用: 闪存
文件页数/大小: 31 页 / 903 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
 浏览型号SST25VF064C-80-4I-Q2AE的Datasheet PDF文件第6页浏览型号SST25VF064C-80-4I-Q2AE的Datasheet PDF文件第7页浏览型号SST25VF064C-80-4I-Q2AE的Datasheet PDF文件第8页浏览型号SST25VF064C-80-4I-Q2AE的Datasheet PDF文件第9页浏览型号SST25VF064C-80-4I-Q2AE的Datasheet PDF文件第11页浏览型号SST25VF064C-80-4I-Q2AE的Datasheet PDF文件第12页浏览型号SST25VF064C-80-4I-Q2AE的Datasheet PDF文件第13页浏览型号SST25VF064C-80-4I-Q2AE的Datasheet PDF文件第14页  
64 Mbit SPI Serial Dual I/O Flash  
SST25VF064C  
Data Sheet  
5. 32KByte Block Erase addresses: use AMS-A15, remaining addresses are don’t care but must be set either at VIL or VIH.  
6. 64KByte Block Erase addresses: use AMS-A16, remaining addresses are don’t care but must be set either at VIL or VIH.  
7. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#.  
8. Manufacturer’s ID is read with A0 = 0, and Device ID is read with A0 = 1. All other address bits are 00H. The Manufacturer’s ID and  
device ID output stream is continuous until terminated by a low-to-high transition on CE#.  
9. Requires a prior WREN command.  
Read (33 MHz)  
The Read instruction, 03H, supports up to 33 MHz Read.  
The device outputs the data starting from the specified  
address location. The data output stream is continuous  
through all addresses until terminated by a low to high tran-  
sition on CE#. The internal address pointer will automati-  
cally increment until the highest memory address is  
reached. Once the highest memory address is reached,  
the address pointer will automatically increment to the  
beginning (wrap-around) of the address space. For exam-  
ple, once the data from address location 7FFFFFH has  
been read, the next output will be from address location  
000000H.  
The Read instruction is initiated by executing an 8-bit com-  
mand, 03H, followed by address bits A23-A0. CE# must  
remain active low for the duration of the Read cycle. See  
Figure 6 for the Read sequence.  
CE#  
MODE 3  
0
1
2
3
4
5
6
7
8
15 16  
23  
31  
39  
40  
47 48  
55 56  
63 64  
70  
24  
32  
MODE 0  
SCK  
03  
ADD.  
MSB  
HIGH IMPEDANCE  
ADD.  
ADD.  
SI  
MSB  
N
OUT  
N+1  
N+2  
N+3  
N+4  
D
OUT  
D
D
D
D
OUT  
OUT  
OUT  
SO  
MSB  
1392 F06.0  
FIGURE 6: Read Sequence  
High-Speed Read (80 MHz)  
The High-Speed Read instruction supporting up to 80 MHz  
Read is initiated by executing an 8-bit command, 0BH, fol-  
lowed by address bits A23-A0 and a dummy byte. CE# must  
remain active low for the duration of the High-Speed Read  
cycle. See Figure 7 for the High-Speed Read sequence.  
Following a dummy cycle, the High-Speed Read instruction  
outputs the data starting from the specified address loca-  
tion. The data output stream is continuous through all  
addresses until terminated by a low to high transition on  
CE#. The internal address pointer will automatically incre-  
ment until the highest memory address is reached. Once  
the highest memory address is reached, the address  
pointer will automatically increment to the beginning (wrap-  
around) of the address space. For example, once the data  
from address location 7FFFFFH is read, the next output is  
from address location 000000H.  
©2010 Silicon Storage Technology, Inc.  
S71392-04-000  
04/10  
10