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SST25VF020-20-4E-S2AE 参数 Datasheet PDF下载

SST25VF020-20-4E-S2AE图片预览
型号: SST25VF020-20-4E-S2AE
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位/ 4兆位的SPI串行闪存 [2 Mbit / 4 Mbit SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 24 页 / 658 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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2 Mbit / 4 Mbit SPI Serial Flash  
SST25VF020 / SST25VF040  
Data Sheet  
Instructions  
Instructions are used to Read, Write (Erase and Program),  
and configure the SST25VF020/040. The instruction bus  
cycles are 8 bits each for commands (Op Code), data, and  
addresses. Prior to executing any Byte-Program, Auto  
Address Increment (AAI) programming, Sector-Erase,  
Block-Erase, or Chip-Erase instructions, the Write-Enable  
(WREN) instruction must be executed first. The complete  
list of the instructions is provided in Table 6. All instructions  
are synchronized off a high to low transition of CE#. Inputs  
will be accepted on the rising edge of SCK starting with the  
most significant bit. CE# must be driven low before an  
instruction is entered and must be driven high after the last  
bit of the instruction has been shifted in (except for Read,  
Read-ID and Read-Status-Register instructions). Any low  
to high transition on CE#, before receiving the last bit of an  
instruction bus cycle, will terminate the instruction in  
progress and return the device to the standby mode.  
Instruction commands (Op Code), addresses, and data are  
all input from the most significant bit (MSB) first.  
1
TABLE 6: DEVICE OPERATION INSTRUCTIONS  
Bus Cycle2  
1
2
3
4
5
Cycle Type/Operation3,4  
SIN  
SOUT  
SIN  
SOUT  
SIN  
SOUT  
SIN  
SOUT SIN SOUT  
Read  
03H  
20H  
52H  
60H  
02H  
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z  
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z  
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z  
A7-A0  
Hi-Z  
Hi-Z  
Hi-Z  
-
X
-
DOUT  
Sector-Erase5,6  
Block-Erase5,7  
Chip-Erase6  
Byte-Program6  
Auto Address Increment (AAI) Program6,8 AFH  
A7-A0  
-
A7-A0  
-
-
Hi-Z  
-
-
-
-
-
-
-
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z  
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z  
A7-A0  
Hi-Z DIN  
Hi-Z DIN  
Hi-Z  
A7-A0  
Hi-Z  
Read-Status-Register (RDSR)  
Enable-Write-Status-Register (EWSR)10  
Write-Status-Register (WRSR)10  
Write-Enable (WREN)  
05H  
50H  
01H  
06H  
04H  
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
X
DOUT  
-
Note9  
-
-
Note9  
-
-
Note9  
-
Data  
-
-
Hi-Z  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-.  
-
-
-
-
-
Write-Disable (WRDI)  
-
-
-
-
12  
Read-ID  
90H or Hi-Z  
ABH  
00H  
Hi-Z  
00H  
Hi-Z ID Addr11 Hi-Z  
X
DOUT  
T6.0 1231  
1. AMS = Most Significant Address  
AMS = A17 for SST25VF020 and A18 for SST25VF040  
Address bits above the most significant bit of each density can be VIL or VIH  
2. One bus cycle is eight clock periods.  
3. Operation: SIN = Serial In, SOUT = Serial Out  
4. X = Dummy Input Cycles (VIL or VIH); - = Non-Applicable Cycles (Cycles are not necessary)  
5. Sector addresses: use AMS-A12, remaining addresses can be VIL or VIH  
6. Prior to any Byte-Program, AAI-Program, Sector-Erase, Block-Erase, or Chip-Erase operation, the Write-Enable (WREN) instruction  
must be executed.  
7. Block addresses for: use AMS-A15, remaining addresses can be VIL or VIH  
8. To continue programming to the next sequential address location, enter the 8-bit command, AFH,  
followed by the data to be programmed.  
9. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#.  
10. The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of  
each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR instruction to make both  
instructions effective.  
11. Manufacturer’s ID is read with A0=0, and Device ID is read with A0=1. All other address bits are 00H. The Manufacturer’s and Device  
ID output stream is continuous until terminated by a low to high transition on CE#  
12. Device ID = 43H for SST25VF020 and 44H for SST25VF040  
©2004 Silicon Storage Technology, Inc.  
S71231-04-000  
6/04  
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