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SST25VF010A-33-4E-QAE 参数 Datasheet PDF下载

SST25VF010A-33-4E-QAE图片预览
型号: SST25VF010A-33-4E-QAE
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位的SPI串行闪存 [1 Mbit SPI Serial Flash]
分类和应用: 闪存内存集成电路时钟
文件页数/大小: 25 页 / 293 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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1 Mbit SPI Serial Flash  
SST25VF010A  
Data Sheet  
Byte-Program  
The Byte-Program instruction programs the bits in the  
selected byte to the desired data. The selected byte must  
be in the erased state (FFH) when initiating a Program  
operation. A Byte-Program instruction applied to a pro-  
tected memory area will be ignored.  
Program instruction is initiated by executing an 8-bit com-  
mand, 02H, followed by address bits [A23-A0]. Following the  
address, the data is input in order from MSB (bit 7) to LSB  
(bit 0). CE# must be driven high before the instruction is  
executed. The user may poll the Busy bit in the software  
status register or wait TBP for the completion of the internal  
self-timed Byte-Program operation. See Figure 6 for the  
Byte-Program sequence.  
Prior to any Write operation, the Write-Enable (WREN)  
instruction must be executed. CE# must remain active low  
for the duration of the Byte-Program instruction. The Byte-  
CE#  
MODE 3  
0
1
2
3
4
5
6
7
8
15 16  
23  
31  
39  
24  
32  
MODE 0  
SCK  
02  
ADD.  
MSB  
ADD.  
ADD.  
D
IN  
MSB LSB  
SI  
MSB  
HIGH IMPEDANCE  
SO  
1265 F06.0  
FIGURE 6: BYTE-PROGRAM SEQUENCE  
©2006 Silicon Storage Technology, Inc.  
S71265-02-000  
1/06  
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