2.4 GHz High-Power and High-Gain Power Amplifier
SST12LP15A
Data Sheet
1000 pF
0.1 µF
10 µF
Vcc
0.1 µF
0.1 µF
3 nH/0805 Inductor
13
16
15
14
1
12
2
3
4
11
10
50Ω /95mil
50Ω/105 mil
50Ω RFin
50Ω RFout
3.0 pF
2.7 nH*
Biascircuit
7
9
Suggested operation conditions:
1 V = 3.3V
5
6
8
CC
2. Center slug to RF ground
3. VREG1=VREG2= 2.85-2.90V
with R1=160Ω
* Could be removed if -7 dB
return loss is acceptable
R2 100Ω
0.1 µF
100pF
R1 160Ω
100pF
10pF
10pF
Det_ref
Det
VREG1 VREG 2
1291 Schematic.1.0
FIGURE 14: Typical Schematic for High-Power, High-Efficiency 2.3-2.4 GHz Applications
0.1 µF
1000 pF
10 µF
Vcc
0.1 µF
0.1 µF
10nH/0805 Inductor
13
16
15
14
1
12
2
3
4
11
10
50Ω /90 mil
50Ω/95 mil
50Ω RFin
50Ω RFout
2.7pF
2.7nH*
Biascircuit
7
9
Suggested operation conditions:
1 V = 3.3V
5
6
8
CC
2. Center slug to RF ground
3. VREG1=VREG2=2.90-2.95 V with
R1=169Ω and R2=140Ω
* Could be removed if -7 dB
return loss is acceptable
R3 100Ω
0.1 µF
100pF
R2 140Ω
100pF
R1 169Ω
10pF
10pF
Det_ref
Det
VREG1 VREG 2
1291 Schematic.2.0
FIGURE 15: Typical Schematic for High-Power, High-Efficiency 2.5-2.6 GHz Applications
©2006 SST Communications Corp.
S71291-02-000
7/06
10
SST [ SILICON STORAGE TECHNOLOGY, INC ]
