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89E52RD2-40-C-NJE 参数 Datasheet PDF下载

89E52RD2-40-C-NJE图片预览
型号: 89E52RD2-40-C-NJE
PDF下载: 下载PDF文件 查看货源
内容描述: 8位8051 Compatibale单片机(MCU)与嵌入式超快闪记忆 [8 bit 8051-Compatibale Microcontroller (MCU) with Embedded SuperFlash Memory]
分类和应用: 微控制器
文件页数/大小: 91 页 / 969 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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FlashFlex51 MCU  
SST89E52RD2 / SST89E54RD2 / SST89E58RD2 / SST89E516RD2  
SST89V52RD2 / SST89V54RD2 / SST89V58RD2 / SST89V516RD2  
Preliminary Specifications  
TABLE 14-3: AC CONDITIONS OF TEST  
Input Rise/Fall Time . . . . . . . . . . . . . . . 10 ns  
Output Load . . . . . . . . . . . . . . . . . . . . . CL = 100 pF  
See Figures 14-8 and 14-10  
T14-3.0 1255  
TABLE 14-4: RECOMMENDED SYSTEM POWER-UP TIMINGS  
Symbol  
Parameter  
Minimum  
Units  
µs  
1
TPU-READ  
Power-up to Read Operation  
Power-up to Write Operation  
100  
100  
1
TPU-WRITE  
µs  
T14-4.0 1255  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter  
TABLE 14-5: PIN IMPEDANCE (VDD=3.3V, Ta=25 °C, f=1 Mhz, other pins open)  
Parameter  
Description  
Test Condition  
VI/O = 0V  
Maximum  
1
CI/O  
I/O Pin Capacitance  
Input Capacitance  
Pin Inductance  
15 pF  
12 pF  
20 nH  
1
CIN  
VIN = 0V  
2
LPIN  
T14-5.0 1255  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
2. Refer to PCI spec.  
©2004 Silicon Storage Technology, Inc.  
S71255-00-000  
3/04  
69  
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