SFF75N05M
SFF75N05Z
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ T
J
=25
o
C
(Unless Otherwise Specified)
RATING
Drain to Source Breakdown Voltage
(VGS =0 V, ID = 250µA)
SYMBOL
MIN
TYP
MAX
UNIT
BV
DSS
ID=37.5A
ID=75A
ID=37.5A
50
-
-
-
75
2
15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13
15
19
Drain to Source on State Resistance
(VGS = 10 V,Tc = 150
o
C)
R
DS(on)
I
D(on)
V
GS(th)
gf
s
I
DSS
-
15
17
-
4.0
-
10
100
100
100
100
20
55
40
70
130
80
1.6
150
2900
1100
275
V
m
Ω
A
V
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
-
-
35
-
-
-
-
80
13
40
20
35
65
40
1.47
70
40/35
2600
700
260
Gate Threshold Voltage
(VDS = VGS, ID = 250µA)
Forward Transconductance
(VDS > ID(on) X RDS (on) Max, IDS=20 Amps)
Smho
µ
A
nA
Zero Gate Voltage Drain Current
(V
DS
= max rated voltage, V
GS
= 0 V)
(V
DS
= 80% rated V
DS
, V
GS
= 0V, T
A
= 125
o
C)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off DelayTime
Fall Time
Diode Forvard Voltage
(I
S
= rated I
D
, V
GS
= 0V, T
J
= 25
o
C)
At rated VGS
VGS = 10 V
80% rated VDS
Rated ID
VDD =50%
rated VDS
rated ID
RG=9.1
Ω
I
GSS
Qg
Qgs
Qgd
t
d (on)
tr
t
d (off)
tf
V
SD
nC
nsec
V
nsec
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TJ =25
o
C
IF = 10A
di/dt = 100A/
µ
sec
VGS =0 Volts
VDS =25 Volts
f =1 MHz
t
rr
Q
RR
Ciss
Coss
Crss
pF
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES:
1/ Maximum current limited by package, die rated at 75A.
SSDI [ SOLID STATES DEVICES, INC ]
