SFF75N05M
SFF75N05Z
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
75 AMP
50 VOLTS
15mΩ
DESIGNER'S DATA SHEET
FEATURES:
N-CHANNEL
• Advanced high-cell density withstands high energy
MOSFET
• Very low conduction and switching losses
• Fast recovery drain-to-source diode with soft recovery
• Rugged construction with poly silicon gate
• Ultra low RDS (on) and high transconductance
• Excellent high temperature stability
TO-254 (M)
TO-254Z (Z)
• Very fast switching speed
• Fastrecoveryandsuperiordv/dtperformance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed package
• TX, TXV and Space Level screening available
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
VALUE
50
UNIT
Volts
V
V
DS
Drain to Source Voltage
50
Volts
Volts
DG
Drain to Gate Voltage (RGS = 1.0 mΩ)
Gate to Source Voltage
V
I
+ 20
GS
@TC=25oC
561/
46
Continuous Drain Current
D
Amps
oC
@TC=100oC
Operating and Storage Temperature
Thermal Resistance, Junction to Case
T
& T
op
stg
0JC
-55 to +175
oC/W
Watts
R
1
@ TC = 25oC
@ TC = 55oC
150
120
Total Device Dissipation
P
D
CASE OUTLINE: TO-254 (Sufix M)
CASE OUTLINE: TO-254Z (Sufix Z)
Pin Out:
Pin Out:
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Available with Glass or Ceramic Seals. Contact Facory for details.
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00257E
SSDI [ SOLID STATES DEVICES, INC ]
