2N7002
ELECTRICAL CHARACTERISTICS
(Tamb=25
o
C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
On-state Drain Current
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V
(BR)DSS
V
th(GS)
l
GSS
I
DSS
I
D(ON)
r
DS(0n)
g
fs
V
DS(on)
V
SD
C
iss
C
OSS
C
rSS
V
DS
=25V, V
GS
=0V, f=1MHz
Test
conditions
MIN
60
1
2.5
±80
80
500
1
1
80
0.5
0.05
0.55
7.5
7.5
500
3.75
0.375
1.2
50
25
5
pF
ms
V
V
V
nA
nA
mA
Ω
TYP
MAX
UNIT
V
V
GS
=0 V, I
D
=10
μA
V
DS
=V
GS
, I
D
=250
μA
V
DS
=0 V, V
GS
=±25 V
V
DS
=60 V, V
GS
=0 V
V
GS
=10 V, V
DS
=7 V
V
GS
=10 V, I
D
=500mA
V
GS
=5 V, I
D
=50mA
V
DS
=10 V, I
D
=200mA
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
I
S
=115mA, V
GS
=0 V
SWITCHING TIME
Turn-on Time
Turn-off Time
t
d(on)
t
d(off)
V
DD
=25 V, R
L
=50Ω
I
D
=500mA,V
GEN
=10 V
R
G
=25
Ω
20
40
ns
08/04/2007 Rev.1.00
www.SiliconStandard.com
2
SSC [ SILICON STANDARD CORP. ]
