2N7002
N-CHANNEL MOSFET
PRODUCT SUMMARY
SOT-23 Plastic-Encapsulate Transistors
SOT-23
FEATURES
High density cell design for low R
DS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
1. GATE
2. SOURCE
3. DRAIN
Pb-free; RoHS-compliant
MARKING: 7002
MAXIMUM RATINGS
(T
A
=25
o
C unless otherwise noted)
Symbol
V
DS
I
D
P
D
T
J
T
stg
Parameter
Drain-Source voltage
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
60
115
225
150
-55-150
Units
V
mA
mW
℃
℃
08/04/2007 Rev.1.00
www.SiliconStandard.com
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