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S29GL128P90FFIR10 参数 Datasheet PDF下载

S29GL128P90FFIR10图片预览
型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
Figure 8.3 Lock Register Program Algorithm  
Write Unlock Cycles:  
Address 555h, Data AAh  
Address 2AAh, Data 55h  
Unlock Cycle 1  
Unlock Cycle 2  
Write  
Enter Lock Register Command:  
Address 555h, Data 40h  
XXXh = Address dont care  
Program Lock Register Data  
Address XXXh, Data A0h  
Address XXXh*, Data PD  
Program Data (PD): See text for Lock Register definitions  
Caution: Lock register can only be progammed once.  
Perform Polling Algorithm  
(see Write Operation Status  
flowchart)  
Yes  
Done?  
No  
No  
DQ5 = 1?  
Error condition (Exceeded Timing Limits)  
Yes  
PASS. Write Lock Register  
Exit Command:  
FAIL. Write rest command  
to return to reading array.  
Address XXXh, Data 90h  
Address XXXh, Data 00h  
Device returns to reading array.  
November 8, 2007 S29GL-P_00_A7  
S29GL-P MirrorBit® Flash Family  
47  
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