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S29GL128P90FFIR10 参数 Datasheet PDF下载

S29GL128P90FFIR10图片预览
型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
2. Input/Output Descriptions & Logic Symbol  
Table 2.1 identifies the input and output package connections provided on the device.  
Table 2.1 Input/Output Descriptions  
Symbol  
Type  
Description  
Address lines for GL01GP  
A24–A0 for GL512P  
A23–A0 for GL256P,  
A22–A0 for GL128P.  
A25–A0  
Input  
DQ14–DQ0  
DQ15/A-1  
I/O  
I/O  
Data input/output.  
DQ15: Data input/output in word mode.  
A-1: LSB address input in byte mode.  
CE#  
OE#  
WE#  
VCC  
VIO  
Input  
Input  
Chip Enable.  
Output Enable.  
Write Enable.  
Device Power Supply.  
Versatile IO Input.  
Ground.  
Input  
Supply  
Supply  
Supply  
VSS  
NC  
No Connect Not connected internally.  
Ready/Busy. Indicates whether an Embedded Algorithm is in progress or complete. At  
VIL, the device is actively erasing or programming. At High Z, the device is in ready.  
RY/BY#  
Output  
Selects data bus width. At VIL, the device is in byte configuration and data I/O pins DQ0-  
DQ7 are active and DQ15/A-1 becomes the LSB address input. At VIH, the device is in  
word configuration and data I/O pins DQ0-DQ15 are active.  
BYTE#  
Input  
Input  
RESET#  
Hardware Reset. Low = device resets and returns to reading array data.  
Write Protect/Acceleration Input. At VIL, disables program and erase functions in the  
outermost sectors. At VHH, accelerates programming; automatically places device in  
unlock bypass mode. Should be at VIH for all other conditions. WP# has an internal pull-  
WP#/ACC  
RFU  
Input  
up; when unconnected, WP# is at VIH  
.
Reserved  
Reserved for future use.  
November 8, 2007 S29GL-P_00_A7  
S29GL-P MirrorBit® Flash Family  
11  
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