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S29GL128P90FAIR12 参数 Datasheet PDF下载

S29GL128P90FAIR12图片预览
型号: S29GL128P90FAIR12
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
8.6.3  
8.6.4  
Write Pulse “Glitch Protection”  
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.  
Power-Up Write Inhibit  
If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept commands on the  
rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up.  
9. Power Conservation Modes  
9.1  
Standby Mode  
When the system is not reading or writing to the device, it can place the device in the standby mode. In this  
mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,  
independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET#  
inputs are both held at VCC 0.3 V. The device requires standard access time (tCE) for read access, before it  
is ready to read data. If the device is deselected during erasure or programming, the device draws active  
current until the operation is completed. ICC4 in “DC Characteristics” represents the standby current  
specification  
9.2  
9.3  
Automatic Sleep Mode  
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables  
this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the  
CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are  
changed. While in sleep mode, output data is latched and always available to the system. ICC6 in Section 11.6  
represents the automatic sleep mode current specification.  
Hardware RESET# Input Operation  
The RESET# input provides a hardware method of resetting the device to reading array data. When RESET#  
is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates  
all outputs, and ignores all read/write commands for the duration of the RESET# pulse. The device also  
resets the internal state machine to reading array data. The operation that was interrupted should be  
reinitiated once the device is ready to accept another command sequence to ensure data integrity.  
When RESET# is held at VSS 0.3 V, the device draws ICC reset current (ICC5). If RESET# is held at VIL but  
not within VSS 0.3 V, the standby current is greater.  
RESET# may be tied to the system reset circuitry and thus, a system reset would also reset the Flash  
memory, enabling the system to read the boot-up firmware from the Flash memory.  
9.4  
Output Disable (OE#)  
When the OE# input is at VIH, output from the device is disabled. The outputs are placed in the high  
impedance state. (With the exception of RY/BY#.)  
November 8, 2007 S29GL-P_00_A7  
S29GL-P MirrorBit® Flash Family  
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