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S29GL064N90TFI070 参数 Datasheet PDF下载

S29GL064N90TFI070图片预览
型号: S29GL064N90TFI070
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Table 9.3 Device Geometry Definition  
Addresses (x16) Addresses (x8)  
Data  
Description  
Device Size = 2N byte  
27h  
4Eh  
00xxh  
0017h = 64 Mb, 0016h = 32 Mb  
Flash Device Interface description (refer to CFI publication 100)  
0001h = x16-only bus devices  
28h  
29h  
50h  
52h  
000xh  
0000h  
0002h = x8/x16 bus devices  
2Ah  
2Bh  
54h  
56h  
0005h  
0000h  
Max. number of byte in multi-byte write = 2N  
(00h = not supported)  
Number of Erase Block Regions within device (01h = uniform device,  
02h = boot device)  
2Ch  
58h  
00xxh  
Erase Block Region 1 Information  
(refer to the CFI specification or CFI publication 100)  
2Dh  
2Eh  
2Fh  
30h  
5Ah  
5Ch  
5Eh  
60h  
00xxh  
000xh  
00x0h  
000xh  
007Fh, 0000h, 0000h, 0001h = 64 Mb (01, 02, 06, 07, V1, V2, V6, V7)  
0007h, 0000h, 0020h, 0000h = 64 Mb (03, 04)  
003Fh, 0000h, 0000h, 0001h = 32 Mb (01, 02, V1, V2)  
0007h, 0000h, 0020h, 0000h = 32 Mb (03, 04)  
Erase Block Region 2 Information (refer to CFI publication 100)  
0000h, 0000h, 0000h, 0000h = 64 Mb (01, 02, 06, 07, V1, V2, V6, V7)  
007Eh, 0000h, 0000h, 0001h = 64 Mb (03, 04)  
31h  
32h  
33h  
34h  
60h  
64h  
66h  
68h  
00xxh  
0000h  
0000h  
000xh  
0000h, 0000h, 0000h, 0000h = 32 Mb (01, 02, V1, V2)  
003Eh, 0000h, 0000h, 0001h = 32 Mb (03, 04)  
35h  
36h  
37h  
38h  
6Ah  
6Ch  
6Eh  
70h  
0000h  
0000h  
0000h  
0000h  
Erase Block Region 3 Information (refer to CFI publication 100)  
Erase Block Region 4 Information (refer to CFI publication 100)  
39h  
3Ah  
3Bh  
3Ch  
72h  
74h  
76h  
78h  
0000h  
0000h  
0000h  
0000h  
November 16, 2007 S29GL-N_01_09  
S29GL-N MirrorBit® Flash Family  
39  
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