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S29GL064M90FFIR10 参数 Datasheet PDF下载

S29GL064M90FFIR10图片预览
型号: S29GL064M90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
Any commands written during the chip erase operation are ignored. However,  
note that a hardware reset immediately terminates the erase operation. If that  
occurs, the chip erase command sequence should be reinitiated once the device  
has returned to reading array data, to ensure data integrity.  
Figure 6 illustrates the algorithm for the erase operation. Refer to the Erase and  
Program Operations table in the AC Characteristics section for parameters, and  
Figure 18 section for timing diagrams.  
Sector Erase Command Sequence  
Sector erase is a six bus cycle operation. The sector erase command sequence is  
initiated by writing two unlock cycles, followed by a set-up command. Two addi-  
tional unlock cycles are written, and are then followed by the address of the  
sector to be erased, and the sector erase command. Table 31 and Table 32 shows  
the address and data requirements for the sector erase command sequence.  
The device does not require the system to preprogram prior to erase. The Em-  
bedded Erase algorithm automatically programs and verifies the entire memory  
for an all zero data pattern prior to electrical erase. The system is not required to  
provide any controls or timings during these operations.  
After the command sequence is written, a sector erase time-out of 50 µs occurs.  
During the time-out period, additional sector addresses and sector erase com-  
mands may be written. Loading the sector erase buffer may be done in any  
sequence, and the number of sectors may be from one sector to all sectors. The  
time between these additional cycles must be less than 50 µs, otherwise erasure  
may begin. Any sector erase address and command following the exceeded time-  
out may or may not be accepted. It is recommended that processor interrupts be  
disabled during this time to ensure all commands are accepted. The interrupts  
can be re-enabled after the last Sector Erase command is written. Any com-  
mand other than Sector Erase or Erase Suspend during the time-out  
period resets the device to the read mode. Note that the SecSi Sector, au-  
toselect, and CFI functions are unavailable when an erase operation is in  
progress. The system must rewrite the command sequence and any additional  
addresses and commands.  
The system can monitor DQ3 to determine if the sector erase timer has timed out  
(See the section on DQ3: Sector Erase Timer.). The time-out begins from the ris-  
ing edge of the final WE# pulse in the command sequence.  
When the Embedded Erase algorithm is complete, the device returns to reading  
array data and addresses are no longer latched. The system can determine the  
status of the erase operation by reading DQ7, DQ6, or DQ2 in the erasing sector.  
Refer to the Write Operation Status section for information on these status bits.  
Once the sector erase operation has begun, only the Erase Suspend command is  
valid. All other commands are ignored. However, note that a hardware reset im-  
mediately terminates the erase operation. If that occurs, the sector erase  
command sequence should be reinitiated once the device has returned to reading  
array data, to ensure data integrity.  
Figure 6 illustrates the algorithm for the erase operation. Refer to the Erase and  
Program Operations table in the AC Characteristics section for parameters, and  
Figure 18 section for timing diagrams.  
110  
S29GLxxxM MirrorBitTM Flash Family  
S29GLxxxM_00A5 April 30, 2004