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S29GL064M90TFIR20 参数 Datasheet PDF下载

S29GL064M90TFIR20图片预览
型号: S29GL064M90TFIR20
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
Test Conditions  
Table 34. Test Specifications  
3.3 V  
Test Condition  
All Speeds  
1 TTL gate  
Unit  
Output Load  
2.7 kΩ  
Device  
Under  
Test  
Output Load Capacitance, CL  
(including jig capacitance)  
30  
pF  
Input Rise and Fall Times  
Input Pulse Levels  
5
ns  
V
C
L
6.2 kΩ  
0.0 or V  
CC  
Input timing measurement  
reference levels (See Note)  
0.5 V  
0.5 V  
V
V
CC  
Output timing measurement  
reference levels  
CC  
Note: Diodes are IN3064 or equivalent  
Figure 11. Test Setup  
Key to Switching Waveforms  
WAVEFORM  
INPUTS  
OUTPUTS  
Steady  
Changing from H to L  
Changing from L to H  
Don’t Care, Any Change Permitted  
Does Not Apply  
Changing, State Unknown  
Center Line is High Impedance State (High Z)  
V
CC  
0.5 V  
Input  
0.5 V  
Measurement Level  
Output  
CC  
CC  
0.0 V  
Figure 12. Input Waveforms and  
Measurement Levels  
April 30, 2004 S29GLxxxM_00A5  
S29GLxxxM MirrorBitTM Flash Family  
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