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S29AL032D70BFI030 参数 Datasheet PDF下载

S29AL032D70BFI030图片预览
型号: S29AL032D70BFI030
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位CMOS 3.0伏只快闪记忆体 [32 Megabit CMOS 3.0 Volt-only Flash Memory]
分类和应用:
文件页数/大小: 69 页 / 1731 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
Table 13. System Interface String  
Addresses  
(Models03,04  
Byte Mode  
Only)  
Addresses  
Data  
Description  
VCC Min. (write/erase)  
D7–D4: volt, D3–D0: 100 millivolt  
1Bh  
36h  
38h  
0027h  
VCC Max. (write/erase)  
D7–D4: volt, D3–D0: 100 millivolt  
1Ch  
0036h  
1Dh  
1Eh  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
3Ah  
3Ch  
3Eh  
40h  
42h  
44h  
46h  
48h  
4Ah  
4Ch  
0000h  
0000h  
0004h  
0000h  
000Ah  
0000h  
0005h  
0000h  
0004h  
0000h  
VPP Min. voltage (00h = no VPP pin present)  
VPP Max. voltage (00h = no VPP pin present)  
Typical timeout per single byte/word write 2N µs  
Typical timeout for Min. size buffer write 2N µs (00h = not supported)  
Typical timeout per individual block erase 2N ms  
Typical timeout for full chip erase 2N ms (00h = not supported)  
Max. timeout for byte/word write 2N times typical  
Max. timeout for buffer write 2N times typical  
Max. timeout per individual block erase 2N times typical  
Max. timeout for full chip erase 2N times typical (00h = not supported)  
June 13, 2005 S29AL032D_00_A3  
S29AL032D  
29