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MBM29F400TC-70 参数 Datasheet PDF下载

MBM29F400TC-70图片预览
型号: MBM29F400TC-70
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH存储器CMOS 4M ( 512K ×8 / 256K ×16 )位 [FLASH MEMORY CMOS 4M (512K x 8/256K x 16) BIT]
分类和应用: 存储
文件页数/大小: 48 页 / 541 K
品牌: SPANSION [ SPANSION ]
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MBM29F400TC-55/-70-90/MBM29F400BC-55/-70-90  
DQ6  
Toggle Bit I  
The MBM29F400TC/BC also feature the “Toggle Bit I” as a method to indicate to the host system that the  
Embedded Algorithms are in progress or completed.  
During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from  
the device will result in DQ6 toggling between one and zero. Once the Embedded Program or Erase Algorithm  
cycle is completed, DQ6 will stop toggling and valid data will be read on the next successive attempts. During  
programming, theToggleBitIisvalidaftertherisingedgeofthefourthwritepulseinthefourwritepulsesequence.  
For chip erase and sector erase, the Toggle Bit I is valid after the rising edge of the sixth write pulse in the six  
write pulse sequence. The Toggle Bit I is active during the sector time out.  
In programming, if the sector being written to is protected, the toggle bit l will toggle for about 2 µs and then stop  
toggling without the data having changed. In erase, the device will erase all the selected sectors except for the  
ones that are protected. If all selected sectors are protected, the chip will toggle the toggle bit for about 100 µs  
and then drop back into read mode, having changed none of the data.  
Either CE or OE toggling will cause the DQ6 to toggle. In addition, an Erase Suspend/Resume command will  
cause DQ6 to toggle.  
See “AC Waveforms for Toggle Bit I during Embedded Algorithm Operations” in TIMING DIAGRAM for the  
Toggle Bit I timing specifications and diagrams.  
DQ5  
Exceeded Timing Limits  
DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under  
these conditions DQ5 will produce a “1”. This is a failure condition which indicates that the program or erase  
cycle was not successfully completed. Data Polling is the only operating function of the devices under this  
condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA).  
The OE and WE pins will control the output disable functions as described in “MBM29F400TC/BC User Bus  
Operation (BYTE = VIH)” and “MBM29F400TC/BC User Bus Operation (BYTE = VIL)” in DEVICE BUS  
OPERATION.  
The DQ5 failure condition may also appear if a user tries to program a non blank location without erasing. In this  
case the device locks out and never complete the Embedded Algorithm operation. Hence, the system never  
reads a valid data on DQ7 bit and DQ6 never stops toggling. Once the device has exceeded timing limits, the  
DQ5 bit will indicate a “1.” Please note that this is not a device failure condition since the device was incorrectly  
used.  
DQ3  
Sector Erase Timer  
After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ3 will  
remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase  
command sequence.  
If Data Polling or the Toggle Bit I indicates the device has been written with a valid erase command, DQ3 may  
be used to determine if the sector erase timer window is still open. If DQ3 is high (“1”) the internally controlled  
erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase  
operation is completed as indicated by Data Polling or Toggle Bit I. If DQ3 is low (“0”), the device will accept  
additional sector erase commands. To insure the command has been accepted, the system software should  
check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 were high on the  
second status check, the command may not have been accepted.  
Refer to “Hardware Sequence Flags” : Hardware Sequence Flags.  
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