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MBM29F040C-90 参数 Datasheet PDF下载

MBM29F040C-90图片预览
型号: MBM29F040C-90
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存4M ( 512K ×8 )位 [FLASH MEMORY 4M (512K x 8) BIT]
分类和应用: 闪存
文件页数/大小: 41 页 / 423 K
品牌: SPANSION [ SPANSION ]
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MBM29F040C-55/-70/-90  
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9  
with CE and OE at VIL and WE at VIH. Scanning the sector addresses (A16, A17 and A18) while (A6, A1, A0) = (0,  
1, 0) will produce a logical “1” code at device output DQ0 for a protected sector. Otherwise the device will read  
00H for unprotected sector. In this mode, the lower order addresses, except for A0, A1 and A6 are DON’T CARES.  
Address locations with A1 = VIL are reserved for Autoselect manufacturer and device codes.  
ItisalsopossibletodetermineifasectorisprotectedinthesystembywritinganAutoselectcommand. Performing  
a read operation at the address location XX02H, where the higher order addresses (A16, A17 and A18) are the  
sector address will produce a logical “1” at DQ0 for a protected sector. See Table 3 for Autoselect codes.  
Table 5 MBM29F040C Command Definitions  
Fourth Bus  
First Bus Second Bus Third Bus  
Write Cycle Write Cycle Write Cycle  
Fifth Bus  
Sixth Bus  
Read/Write  
Cycle  
Bus  
Write  
Cycles  
Req'd  
Command  
Sequence  
Read/Reset  
Write Cycle Write Cycle  
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data  
Read/Reset*  
Read/Reset*  
Autoselect  
1
4
3
4
6
6
XXXH F0H  
RA  
RD  
555H AAH 2AAH 55H 555H F0H  
555H AAH 2AAH 55H 555H 90H  
555H AAH 2AAH 55H 555H A0H  
Byte Program  
Chip Erase  
PA  
PD  
555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H  
555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H SA 30H  
Sector Erase  
Sector Erase Suspend Erase can be suspended during sector erase with Addr (“H” or “L”). Data (B0H)  
Sector Erase Resume Erase can be resumed after suspend with Addr (“H” or “L”). Data (30H)  
Notes:1. Address bits A11 to A18 = X = “H” or “L” for all address commands except for Program Address (PA) and  
Sector Address (SA).  
2. Bus operations are defined in Table 2.  
3. RA = Address of the memory location to be read.  
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the  
WE pulse.  
SA = Address of the sector to be erased. The combination of A18, A17, and A16 will uniquely select any  
sector.  
4. RD = Data read from location RA during read operation.  
PD = Data to be programmed at location PA. Data is latched on the falling edge of WE.  
*: Either of the two reset commands will reset the device.  
Command Definitions  
Device operations are selected by writing specific address and data sequences into the command register.  
Writing incorrect address and data values or writing them in the improper sequence will reset the device to read  
mode. Table 5 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase  
Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover, both Read/  
Reset Commands are functionally equivalent, resetting the device to the read mode.  
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