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MBM29DL324TE90TN 参数 Datasheet PDF下载

MBM29DL324TE90TN图片预览
型号: MBM29DL324TE90TN
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH存储器CMOS 32米(4 MX 8/2 MX 16 )位双操作 [FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation]
分类和应用: 存储
文件页数/大小: 84 页 / 1272 K
品牌: SPANSION [ SPANSION ]
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MBM29DL32XTE/BE80/90  
EMBEDDED ALGORITHM  
Start  
Write Erase  
Command Sequence  
(See Below)  
Data Polling  
Embedded  
Erase  
Algorithm  
in progress  
No  
Data = FFh  
?
Yes  
Erasure Completed  
Individual Sector/Multiple Sector  
Erase Command Sequence  
(Address/Command):  
Chip Erase Command Sequence  
(Address/Command):  
555h/AAh  
2AAh/55h  
555h/80h  
555h/AAh  
2AAh/55h  
555h/10h  
555h/AAh  
2AAh/55h  
555h/80h  
555h/AAh  
2AAh/55h  
Sector Address  
/30h  
Sector Address  
/30h  
Additional sector  
erase commands  
are optional.  
Sector Address  
/30h  
Notes : The sequence is applied for ×16 mode.  
The addresses differ from ×8 mode.  
Embedded EraseTM Algorithm  
72  
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