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MBM29DL324TE90TN 参数 Datasheet PDF下载

MBM29DL324TE90TN图片预览
型号: MBM29DL324TE90TN
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH存储器CMOS 32米(4 MX 8/2 MX 16 )位双操作 [FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation]
分类和应用: 存储
文件页数/大小: 84 页 / 1272 K
品牌: SPANSION [ SPANSION ]
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MBM29DL32XTE/BE80/90  
FEATURES  
• 0.23 µm Process Technology  
Simultaneous Read/Write operations (dual bank)  
Multiple devices available with different bank sizes (Refer to “MBM29DL32XTE/BE Device Bank Divisions” in  
FEATURES”)  
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank  
Zero latency between read and write operations  
Read-while-erase  
Read-while-program  
Single 3.0 V read, program, and erase  
Minimizes system level power requirements  
Compatible with JEDEC-standard commands  
Uses same software commands as E2PROMs  
Compatible with JEDEC-standard world-wide pinouts  
48-pin TSOP (1) (Package suffix : TN Normal Bend Type, TR Reversed Bend Type)  
63-ball FBGA (Package suffix : PBT)  
• Minimum 100,000 program/erase cycles  
High performance  
80 ns maximum access time  
Sector erase architecture  
Eight 4 Kword and sixty-three 32 Kword sectors in word mode  
Eight 8 Kbyte and sixty-three 64 Kbyte sectors in byte mode  
Any combination of sectors can be concurrently erased. Also supports full chip erase.  
Boot Code Sector Architecture  
T = Top sector  
B = Bottom sector  
HiddenROM region  
64 Kbyte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence  
Factory serialized and protected to provide a secure electronic serial number (ESN)  
WP/ACC input pin  
At VIL, allows protection of boot sectors, regardless of sector group protection/unprotection status  
At VACC, increases program performance  
Embedded EraseTM Algorithms  
Automatically pre-programs and erases the chip or any sector  
Embedded ProgramTM Algorithms  
Automatically writes and verifies data at specified address  
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion  
Ready/Busy output (RY/BY)  
Hardware method for detection of program or erase cycle completion  
Automatic sleep mode  
When addresses remain stable, automatically switch themselves to low power mode.  
Low VCC write inhibit 2.5 V  
Erase Suspend/Resume  
Suspends the erase operation to allow a read data and/or program in another sector within the same device  
Sector group protection  
Hardware method disables any combination of sector groups from program or erase operations  
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.  
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