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MBM29DL324TE90TN 参数 Datasheet PDF下载

MBM29DL324TE90TN图片预览
型号: MBM29DL324TE90TN
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH存储器CMOS 32米(4 MX 8/2 MX 16 )位双操作 [FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation]
分类和应用: 存储
文件页数/大小: 84 页 / 1272 K
品牌: SPANSION [ SPANSION ]
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MBM29DL32XTE/BE80/90  
MBM29DL324TE/BE Sector Group Protection Verify Autoselect Codes  
*1  
Type  
A20 to A12  
A6  
A1  
A0  
A-1  
Code (HEX)  
04h  
Manufacture’s Code  
BA*3  
VIL  
VIL  
VIL  
VIL  
VIL  
X
Byte  
Word  
Byte  
5Ch  
MBM29DL324TE  
BA*3  
BA*3  
VIL  
VIL  
VIH  
225Ch  
5Fh  
Device  
Code  
VIL  
X
MBM29DL324BE  
VIL  
VIL  
VIH  
VIH  
VIL  
Word  
225Fh  
Sector group  
addresses  
Sector Group Protection  
VIL  
VIL  
01h*2  
*1 : A-1 is for Byte mode. At Byte mode, DQ8 to DQ14 are High-Z and DQ15 is A-1, the lowest address.  
*2 : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses.  
*3 : When VID is applied to A9, both Bank 1 and Bank 2 are put into Autoselect mode, which makes simultaneous  
operation unable to be executed. Consequently, specifying the bank address is not required. However, the bank  
address needs to be indicated when Autoselect mode is read out at command mode, because then it enables  
to activate simultaneous operation.  
Extended Autoselect Code Table  
DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0  
Type  
Code  
A-1/  
0
04h  
Manufacturer’s Code  
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
(B) *  
(W)  
5Ch A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0  
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
0
0
1
1
MBM29DL324  
TE  
225Ch  
5Fh  
0
0
1
0
0
0
1
0
0
Device  
Code  
(B) *  
(W)  
A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0  
MBM29DL324  
BE  
225Fh 0  
A-1/  
0
1
0
0
0
1
0
0
01h  
Sector Group Protection  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
* : At Byte mode, DQ8 to DQ14 are High-Z and DQ15 is A-1, the lowest address.  
(B) : Byte mode  
(W) : Word mode  
HI-Z : High-Z  
15  
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