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MBM29DL163BE-70TN 参数 Datasheet PDF下载

MBM29DL163BE-70TN图片预览
型号: MBM29DL163BE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
(4) AC Waveforms for Alternate CE Controlled Program Operations  
3rd Bus Cycle  
Data Polling  
Address  
WE  
PA  
PA  
555h  
tWC  
tAS  
tAH  
tWS  
tWH  
OE  
CE  
tGHEL  
tCP  
tCPH  
tWHWH1  
tDS  
tDH  
A0h  
PD  
DQ7  
DOUT  
Data  
Notes : PA is address of the memory location to be programmed.  
PD is data to be programmed at byte address.  
DQ7 is the output of the complement of the data written to the device.  
DOUT is the output of the data written to the device.  
Figure indicates the last two bus cycles out of four bus cycle sequence.  
These waveforms are for the × 16 mode. These address differ from × 8 mode.  
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