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AM29LV640MH112RPCI 参数 Datasheet PDF下载

AM29LV640MH112RPCI图片预览
型号: AM29LV640MH112RPCI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(4M ×16位/ 8的M× 8位)的MirrorBit 3.0伏特,只有统一部门快闪记忆体与VersatileI / O控制 [64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control]
分类和应用: 闪存内存集成电路
文件页数/大小: 62 页 / 1108 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
at VHH for operations other than accelerated program- this mode when addresses remain stable for tACC  
+
ming, or device damage may result. In addition, no ex-  
ternal pullup is necessary since the WP#/ACC pin has  
internal pullup to VCC.  
30 ns. The automatic sleep mode is independent of  
the CE#, WE#, and OE# control signals. Standard ad-  
dress access timings provide new data when ad-  
dresses are changed. While in sleep mode, output  
data is latched and always available to the system.  
Refer to the DC Characteristics table for the automatic  
sleep mode current specification.  
Autoselect Functions  
If the system writes the autoselect command se-  
quence, the device enters the autoselect mode. The  
system can then read autoselect codes from the inter-  
nal register (which is separate from the memory array)  
on DQ7–DQ0. Standard read cycle timings apply in  
this mode. Refer to the Autoselect Mode and Autose-  
lect Command Sequence sections for more informa-  
tion.  
RESET#: Hardware Reset Pin  
The RESET# pin provides a hardware method of re-  
setting the device to reading array data. When the RE-  
SET# pin is driven low for at least a period of tRP, the  
device immediately terminates any operation in  
progress, tristates all output pins, and ignores all  
read/write commands for the duration of the RESET#  
pulse. The device also resets the internal state ma-  
chine to reading array data. The operation that was in-  
terrupted should be reinitiated once the device is  
ready to accept another command sequence, to en-  
sure data integrity.  
Standby Mode  
When the system is not reading or writing to the de-  
vice, it can place the device in the standby mode. In  
this mode, current consumption is greatly reduced,  
and the outputs are placed in the high impedance  
state, independent of the OE# input.  
Current is reduced for the duration of the RESET#  
pulse. When RESET# is held at VSS 0.3 V, the device  
draws CMOS standby current (ICC4). If RESET# is held  
at VIL but not within VSS 0.3 V, the standby current will  
be greater.  
The device enters the CMOS standby mode when the  
CE# and RESET# pins are both held at VIO 0.3 V.  
(Note that this is a more restricted voltage range than  
VIH.) If CE# and RESET# are held at VIH, but not within  
VIO 0.3 V, the device will be in the standby mode, but  
the standby current will be greater. The device re-  
quires standard access time (tCE) for read access  
when the device is in either of these standby modes,  
before it is ready to read data.  
The RESET# pin may be tied to the system reset cir-  
cuitry. A system reset would thus also reset the Flash  
memory, enabling the system to read the boot-up firm-  
ware from the Flash memory.  
If the device is deselected during erasure or program-  
ming, the device draws active current until the  
operation is completed.  
Refer to the AC Characteristics tables for RESET# pa-  
rameters and to Figure 16 for the timing diagram.  
Output Disable Mode  
When the OE# input is at VIH, output from the device is  
disabled. The output pins are placed in the high  
impedance state.  
Refer to the DC Characteristics table for the standby  
current specification.  
Automatic Sleep Mode  
The automatic sleep mode minimizes Flash device en-  
ergy consumption. The device automatically enables  
12  
Am29LV640MH/L  
December 14, 2005  
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