AC CHARACTERISTICS
Erase and Program Operations
Parameter
Speed Options
JEDEC
tAVAV
Std
tWC
tAS
Description
55
60
70
90
Unit
ns
Write Cycle Time (Note 1)
Address Setup Time
Min
Min
55
60
70
90
tAVWL
0
ns
Address Setup Time to OE# low during toggle bit
polling
tASO
tAH
Min
Min
Min
15
ns
ns
ns
tWLAX
Address Hold Time
30
30
35
35
40
40
45
45
Address Hold Time From CE# or OE# high
during toggle bit polling
tAHT
0
tDVWH
tWHDX
tDS
tDH
Data Setup Time
Min
Min
Min
ns
ns
ns
Data Hold Time
0
tOEPH
Output Enable High during toggle bit polling
20
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHWL
tGHWL
Min
0
ns
tELWL
tWHEH
tWLWH
tWHDL
tCS
tCH
CE# Setup Time
Min
Min
Min
Min
Min
Typ
Typ
0
0
ns
ns
ns
ns
ns
CE# Hold Time
tWP
Write Pulse Width
25
25
25
25
30
30
35
30
tWPH
tSR/W
Write Pulse Width High
Latency Between Read and Write Operations
0
5
7
Byte
Word
tWHWH1
tWHWH1
Programming Operation (Note 2)
µs
µs
Accelerated Programming Operation,
Word or Byte (Note 2)
tWHWH1
tWHWH2
tWHWH1
Typ
4
tWHWH2
tVCS
Sector Erase Operation (Note 2)
VCC Setup Time (Note 1)
Typ
Min
Min
Max
0.4
50
0
sec
µs
tRB
Write Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
ns
tBUSY
90
ns
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
June 7, 2005
Am29DL640H
39
SPANSION [ SPANSION ]
