欢迎访问ic37.com |
会员登录 免费注册
发布采购

AM29DL163DB120ZF 参数 Datasheet PDF下载

AM29DL163DB120ZF图片预览
型号: AM29DL163DB120ZF
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 2MX8, 120ns, PDSO56, MO-180BA, SSOP-56]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 51 页 / 1064 K
品牌: SPANSION [ SPANSION ]
 浏览型号AM29DL163DB120ZF的Datasheet PDF文件第4页浏览型号AM29DL163DB120ZF的Datasheet PDF文件第5页浏览型号AM29DL163DB120ZF的Datasheet PDF文件第6页浏览型号AM29DL163DB120ZF的Datasheet PDF文件第7页浏览型号AM29DL163DB120ZF的Datasheet PDF文件第9页浏览型号AM29DL163DB120ZF的Datasheet PDF文件第10页浏览型号AM29DL163DB120ZF的Datasheet PDF文件第11页浏览型号AM29DL163DB120ZF的Datasheet PDF文件第12页  
A D V A N C E
I N F O R M A T I O N
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
ti on . T he re gi s ter is a la tch u s ed to store th e
commands, along with the address and data informa-
tion needed to execute the command. The contents of
Table 1.
the register serve as inputs to the internal state ma-
chine. The state machine outputs dictate the function
of the device. Table 1 lists the device bus operations,
the inputs and control levels they require, and the re-
sulting output. The following subsections describe
each of these operations in further detail.
Am29DL163D/Am29DL164D Device Bus Operations
DQ8–DQ15
Operation
Read
Write
Standby
Output Disable
Reset
Sector Protect (Note 2)
Sector Unprotect (Note 2)
Temporary Sector Unprotect
CE# OE# WE# RESET# WP#/ACC
L
L
V
CC
±
0.3 V
L
X
L
L
X
L
H
X
H
X
H
H
X
H
L
X
H
X
L
L
X
H
H
V
CC
±
0.3 V
H
L
V
ID
V
ID
V
ID
L/H
(Note 3)
H
L/H
L/H
L/H
(Note 3)
(Note 3)
Addresses
(Note 2)
A
IN
A
IN
X
X
X
SA, A6 = L,
A1 = H, A0 = L
SA, A6 = H,
A1 = H, A0 = L
A
IN
DQ0– BYTE#
DQ7
= V
IH
D
OUT
D
IN
D
OUT
D
IN
BYTE#
= V
IL
DQ8–DQ14 = High-Z,
DQ15 = A-1
High-Z
High-Z
High-Z
X
X
High-Z
High-Z High-Z
High-Z High-Z
High-Z High-Z
D
IN
D
IN
D
IN
X
X
D
IN
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, V
ID
= 8.5–12.5 V, V
HH
= 9.0 ± 0.5 V, X = Don’t Care, SA = Sector Address,
A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. Addresses are A19:A0 in word mode (BYTE# = V
IH
), A19:A-1 in byte mode (BYTE# = V
IL
).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
3. If WP#/ACC = V
IH
, the two outermost boot sector
protection depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block
Protection and Unprotection”. If WP#/ACC = V
HH,
all sectors will be unprotected.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word con-
figuration, DQ0–DQ15 are active and controlled by
CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to V
IL
. CE# is the power
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at V
IH
. The BYTE# pin determines
whether the device outputs array data in words or
bytes.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No com-
mand is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
8
Am29DL163D/Am29DL164D