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AM29DL162CT-120ZF 参数 Datasheet PDF下载

AM29DL162CT-120ZF图片预览
型号: AM29DL162CT-120ZF
PDF下载: 下载PDF文件 查看货源
内容描述: [2MX8 FLASH 3V PROM, 120ns, PDSO56, SSOP-56]
分类和应用: 可编程只读存储器光电二极管内存集成电路
文件页数/大小: 50 页 / 722 K
品牌: SPANSION [ SPANSION ]
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P R E L I M I N A R Y  
Any commands written during the chip erase operation  
are ignored. However, note that a hardware reset im-  
mediately terminates the erase operation. If that  
occurs, the chip erase command sequence should be  
reinitiated once that bank has returned to reading  
array data, to ensure data integrity.  
START  
Figure 4 illustrates the algorithm for the erase opera-  
tion. Refer to the Erase and Program Operations  
tables in the AC Characteristics section for parame-  
ters, and Figure 19 section for timing diagrams.  
Write Program  
Command Sequence  
Data Poll  
from System  
Sector Erase Command Sequence  
Embedded  
Program  
algorithm  
in progress  
Sector erase is a six bus cycle operation. The sector  
erase command sequence is initiated by writing two  
unlock cycles, followed by a set-up command. Two ad-  
ditional unlock cycles are written, and are then  
followed by the address of the sector to be erased, and  
the sector erase command. Table 14 shows the ad-  
dress and data requirements for the sector erase  
command sequence.  
Verify Data?  
Yes  
No  
No  
The device does not require the system to preprogram  
prior to erase. The Embedded Erase algorithm auto-  
matically programs and verifies the entire memory for  
an all zero data pattern prior to electrical erase. The  
system is not required to provide any controls or tim-  
ings during these operations.  
Increment Address  
Last Address?  
Yes  
Programming  
Completed  
After the command sequence is written, a sector erase  
time-out of 50 µs occurs. During the time-out period,  
additional sector addresses and sector erase com-  
mands may be written. Loading the sector erase buffer  
may be done in any sequence, and the number of sec-  
tors may be from one sector to all sectors. The time  
between these additional cycles must be less than  
50 µs, otherwise erasure may begin. Any sector erase  
address and command following the exceeded  
time-out may or may not be accepted. It is recom-  
mended that processor interrupts be disabled during  
this time to ensure all commands are accepted. The  
interrupts can be re-enabled after the last Sector  
Erase command is written. Any command other than  
Sector Erase or Erase Suspend during the  
time-out period resets that bank to reading array  
data. The system must rewrite the command se-  
quence and any additional addresses and commands.  
21533C-8  
Note: See Table 14 for program command sequence.  
Figure 3. Program Operation  
Chip Erase Command Sequence  
Chip erase is a six bus cycle operation. The chip erase  
command sequence is initiated by writing two unlock  
cycles, followed by a set-up command. Two additional  
unlock write cycles are then followed by the chip erase  
command, which in turn invokes the Embedded Erase  
algorithm. The device does not require the system to  
preprogram prior to erase. The Embedded Erase algo-  
rithm automatically preprograms and verifies the entire  
memory for an all zero data pattern prior to electrical  
erase. The system is not required to provide any con-  
trols or timings during these operations. Table 14  
shows the address and data requirements for the chip  
erase command sequence.  
The system can monitor DQ3 to determine if the sec-  
tor erase timer has timed out (See the section on DQ3:  
Sector Erase Timer.). The time-out begins from the ris-  
ing edge of the final WE# pulse in the command  
sequence.  
When the Embedded Erase algorithm is complete,  
that bank returns to reading array data and addresses  
are no longer latched. The system can determine the  
status of the erase operation by using DQ7, DQ6,  
DQ2, or RY/BY#. Refer to the Write Operation Status  
section for information on these status bits.  
When the Embedded Erase algorithm is complete, the  
bank returns to reading array data and addresses are  
no longer latched. Note that while the Embedded  
Erase operation is in progress, the system can read  
data from the non-erasing bank. The system can de-  
termine the status of the erase operation by reading  
23  
Am29DL162C/Am29DL163C  
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