D A T A S H E E T
Table 4. System Interface String
Addresses
Data
Description
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Bh
0017h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0019h
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
0000h
0000h
0003h
0000h
0008h
0000h
0005h
0000h
0004h
0000h
VPP Min. voltage (00h = no VPP pin present) Refer to 4Dh.
V
PP Max. voltage (00h = no VPP pin present) Refer to 4Eh.
Typical timeout per single byte/word write 2N µs
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
Typical timeout per individual block erase 2N ms
Typical timeout for full chip erase 2N ms (00h = not supported)
Max. timeout for byte/word write 2N times typical
Max. timeout for buffer write 2N times typical
Max. timeout per individual block erase 2N times typical
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 5. Device Geometry Definition
Description
Addresses
Data
27h
0017h
Device Size = 2N byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of bytes in multi-byte write = 2N
(00h = not supported)
2Ch
0004h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
005Eh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0003h
0000h
0040h
0000h
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
35h
36h
37h
38h
001Eh
0000h
0000h
0001h
39h
3Ah
3Bh
3Ch
0003h
0000h
0040h
0000h
14
Am29BDS643G
25692A2 May 8, 2006
SPANSION [ SPANSION ]
