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AM29BDS643GT7GVAI 参数 Datasheet PDF下载

AM29BDS643GT7GVAI图片预览
型号: AM29BDS643GT7GVAI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(4M ×16位) CMOS 1.8伏只同步读/写,突发模式闪存 [64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 49 页 / 718 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
tions” and “Programmable Wait State” for further  
38-3Fh, and the burst sequence would be  
39-3A-3B-3C-3D-3E-3F-38h. The burst sequence  
begins with the starting address written to the device,  
but wraps back to the first address in the selected  
group. In a similar fashion, the 16-word and 32-word  
Linear Wrap modes begin their burst sequence on the  
starting address written to the device, and then wrap  
back to the first address in the selected address group.  
Note that in these three burst read modes the  
address pointer does not cross the boundary that  
occurs every 64 words; thus, no wait states are  
inserted (except during the initial access).  
details).  
The initial word is output t  
the first CLK cycle. Subsequent words are output t  
after the rising edge of  
IACC  
BACC  
after the rising edge of each successive clock cycle,  
which automatically increments the internal address  
counter. Note that the device has a fixed internal  
address boundary that occurs every 64 words,  
starting at address 00003Eh. The transition from  
the highest address 3FFFFFh to 000000h is also a  
boundary crossing. During the time the device is out-  
putting the 64th word (address 00003Eh, 00007Eh,  
0000BEh, etc.), a two cycle latency occurs before data  
appears for the next address (address 00003Fh,  
00007Fh, 0000BFh, etc.). The RDY output indicates  
this condition to the system by pulsing low. See Figure  
19.  
If the clock frequency is less than 6 MHz during a burst  
mode operation, additional latencies will occur. RDY  
indicates the length of the latency by pulsing low.  
Programmable Wait State  
The programmable wait state feature indicates to the  
device the number of additional clock cycles that must  
elapse after AVD# is driven active before data will be  
available. Upon power up, the device defaults to the  
maximum of seven total cycles. The total number of  
wait states is programmable from two to seven cycles.  
The device will continue to output continuous, sequen-  
tial burst data, wrapping around to address 000000h  
after it reaches the highest addressable memory loca-  
tion, until the system asserts CE# high, RESET# low,  
or AVD# low in conjunction with a new address. See  
Table 1. The reset command does not terminate the  
burst read operation.  
The wait state command sequence requires three  
cycles; after the two unlock cycles, the third cycle  
address should be written according to the desired wait  
state as shown in Table 8. Address bits A11-A0 should  
be set to 555h, while addresses bits A16-A12 set the  
wait state. For further details, see “Set Configuration  
Register Command Sequence”.  
If the host system crosses the bank boundary while  
reading in burst mode, and the device is not program-  
ming or erasing, a two-cycle latency will occur as  
described above. If the host system crosses the bank  
boundary while the device is programming or erasing,  
the device will provide asynchronous read status infor-  
mation. The clock will be ignored. After the host has  
completed status reads, or the device has completed  
the program or erase operation, the host can restart a  
burst operation using a new address and AVD# pulse.  
Handshaking Feature  
The handshaking feature allows the host system to  
simply monitor the RDY signal from the device to deter-  
mine when the initial word of burst data is ready to be  
read. The host system should use the wait state  
command sequence to set the number of wait states  
for optimal burst mode operation (02h for 40 MHz  
clock, 03h for 54 and 66 MHz clock). The initial word of  
burst data is indicated by the rising edge of RDY after  
OE# goes low.  
If the clock frequency is less than 6 MHz during a burst  
mode operation, additional latencies will occur. RDY  
indicates the length of the latency by pulsing low.  
8-, 16-, and 32-Word Linear Burst with Wrap Around  
The remaining three modes are of the linear wrap  
around design, in which a fixed number of words are  
read from consecutive addresses. In each of these  
modes, the burst addresses read are determined by  
the group within which the starting address falls. The  
groups are sized according to the number of words  
read in a single burst sequence for a given mode (see  
Table 2.)  
The handshaking feature may be verified by writing the  
autoselect command sequence to the device. See  
“Autoselect Command Sequence” for details.  
For optimal burst mode performance on devices  
without the handshaking option, the host system must  
set the appropriate number of wait states in the flash  
device depending on such factors as clock frequency,  
presence of a boundary crossing, or an odd or even  
starting address. See “Set Configuration Register  
Command Sequence” section for more information.  
Table 2. Burst Address Groups  
Mode  
8-word  
16-word  
32-word  
Group Size Group Address Ranges  
8 words  
16 words  
32 words  
0-7h, 8-Fh, 10-17h, 18-1Fh...  
0-Fh, 10-1Fh, 20-2Fh, 30-3Fh...  
00-1Fh, 20-3Fh, 40-5Fh, 60-7Fh...  
The autoselect function allows the host system to dis-  
tinguish flash devices that have handshaking from  
those that do not. See the “Autoselect Command  
Sequence” section for more information.  
As an example: if the starting address in the 8-word  
mode is 39h, the address range to be read would be  
10  
Am29BDS643G  
25692A2 May 8, 2006