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AM29BL802CB-90R 参数 Datasheet PDF下载

AM29BL802CB-90R图片预览
型号: AM29BL802CB-90R
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 512K的x 16位) CMOS 3.0伏只突发模式闪存 [8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 46 页 / 772 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
Temporary Sector Unprotect  
HARDWARE DATA PROTECTION  
This feature allows temporary unprotection of previ-  
ously protected sectors to change data in-system. The  
Sector Unprotect mode is activated by setting the RE-  
The command sequence requirement of unlock cycles  
for programming or erasing provides data protection  
against inadvertent writes (refer to Table 4 for com-  
mand definitions). In addition, the following hardware  
data protection measures prevent accidental erasure  
or programming, which might otherwise be caused by  
SET# pin to V . During this mode, formerly protected  
ID  
sectors can be programmed or erased by selecting the  
sector addresses. Once V is removed from the RE-  
ID  
SET# pin, all the previously protected sectors are  
protected again. Figure 2 shows the algorithm, and  
Figure 23 shows the timing diagrams, for this feature.  
spurious system level signals during V power-up and  
power-down transitions, or from system noise.  
CC  
Low VCC Write Inhibit  
When V  
is less than V  
, the device does not ac-  
CC  
LKO  
cept any write cycles. This protects data during V  
power-up and power-down. The command register and  
all internal program/erase circuits are disabled, and the  
CC  
START  
device resets. Subsequent writes are ignored until V  
CC  
RESET# = VID  
(Note 1)  
is greater than V  
. The system must provide the  
LKO  
proper signals to the control pins to prevent uninten-  
tional writes when V is greater than V  
.
CC  
LKO  
Perform Erase or  
Program Operations  
Write Pulse “Glitch” Protection  
Noise pulses of less than 5 ns (typical) on OE#, CE# or  
WE# do not initiate a write cycle.  
RESET# = VIH  
Logical Inhibit  
Write cycles are inhibited by holding any one of OE# =  
Temporary Sector  
Unprotect Completed  
(Note 2)  
V , CE# = V or WE# = V . To initiate a write cycle,  
IL  
IH  
IH  
CE# and WE# must be a logical zero while OE# is a  
logical one.  
Notes:  
Power-Up Write Inhibit  
1. All protected sectors unprotected.  
If WE# = CE# = V and OE# = V during power up, the  
IL  
IH  
2. All previously protected sectors are protected once  
again.  
device does not accept commands on the rising edge  
of WE#. The internal state machine is automatically  
reset to reading array data on power-up.  
Figure 2. Temporary Sector Unprotect Operation  
COMMAND DEFINITIONS  
Writing specific address and data commands or se-  
quences into the command register initiates device op-  
erations. Table 4 defines the valid register command  
sequences. Writing incorrect address and data val-  
ues or writing them in the improper sequence resets  
the device to reading array data.  
retrieve data. The device is also ready to read array  
data after completing an Embedded Program or Em-  
bedded Erase algorithm.  
After the device accepts an Erase Suspend com-  
mand, the device enters the Erase Suspend mode.  
The system can read array data using the standard  
read timings, except that if it reads at an address  
within erase-suspended sectors, the device outputs  
status data. After completing a programming opera-  
tion in the Erase Suspend mode, the system may  
once again read array data with the same exception.  
See “Erase Suspend/Erase Resume Commands” for  
more information on this mode.  
All addresses are latched on the falling edge of  
WE# or CE#, whichever happens later. All data is  
latched on the rising edge of WE# or CE#, whichever  
happens first. Refer to the appropriate timing diagrams  
in the AC Characteristics section.  
Reading Array Data in Non-burst Mode  
The device is automatically set to reading array data  
after device power-up. No commands are required to  
The system must issue the reset command to re-en-  
able the device for reading array data if DQ5 goes high,  
14  
Am29BL802C  
22371C7 November 3, 2006