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AM29BL162CB-3DGH1 参数 Datasheet PDF下载

AM29BL162CB-3DGH1图片预览
型号: AM29BL162CB-3DGH1
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 1一M× 16位) CMOS 3.0伏只,突发模式,引导扇区闪存裸片修订版1 [16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1]
分类和应用: 闪存
文件页数/大小: 19 页 / 300 K
品牌: SPANSION [ SPANSION ]
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SUPPLEMENT  
Am29BL162C Known Good Die  
16 Megabit (1 M x 16-Bit)  
CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory—Die  
Revision 1  
DISTINCTIVE CHARACTERISTICS  
32 words sequential with wrap around (linear  
Minimum 100,000 erase cycle guarantee  
32), bottom boot  
per sector  
20-year data retention at 125°C  
Compatibility with JEDEC standards  
One 8 Kword, two 4 Kword, one 112 Kword, and  
seven 128 Kword sectors  
— Pinout and software compatible with single-  
power supply Flash  
Single power supply operation  
— Regulated voltage range: 3.0 to 3.6 volt read and  
write operations and for compatibility with high  
performance 3.3 volt microprocessors  
— Superior inadvertent write protection  
— Backward-compatible with AMD Am29LV and  
Am29F flash memories: powers up in  
Read access times  
asynchronous mode for system boot, but can  
immediately be placed into burst mode  
22 ns burst access  
(at extended temperature range)  
Data# Polling and toggle bits  
80 ns initial/random access  
Alterable burst length via BAA# pin  
Power dissipation (typical)  
— Provides a software method of detecting program  
or erase operation completion  
Ready/Busy# pin (RY/BY#)  
— Burst Mode Read: 15 mA @ 25 MHz,  
20 mA @ 33 MHz  
— Provides a hardware method of detecting  
program or erase cycle completion  
— Program/Erase: 20 mA  
Erase Suspend/Erase Resume  
— Standby mode, CMOS: 22 µA  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
5 V-tolerant data, address, and control signals  
Sector Protection  
— Implemented using in-system or via  
programming equipment  
Hardware reset pin (RESET#)  
— Hardware method to reset the device for reading  
array data  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
Tested to datasheet specifications at  
Unlock Bypass Program Command  
temperature  
— Reduces overall programming time when issuing  
multiple program command sequences  
Quality and reliability levels equivalent to  
standard packaged components  
Embedded Algorithms  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
Publication# 23783 Rev: A Amendment/+4  
Issue Date: April 29, 2003  
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