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AM29BDS643GT7GVAF 参数 Datasheet PDF下载

AM29BDS643GT7GVAF图片预览
型号: AM29BDS643GT7GVAF
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 4MX16, 70ns, PBGA44, 9.20 X 8 MM, 0.50 MM PITCH, FBGA-44]
分类和应用: 内存集成电路
文件页数/大小: 49 页 / 833 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
DEVICE BUS OPERATIONS  
This section describes the requirements and use of the  
device bus operations, which are initiated through the  
internal command register. The command register it-  
self does not occupy any addressable memory loca-  
tion. The register is composed of latches that store the  
commands, along with the address and data informa-  
tion needed to execute the command. The contents of  
the register serve as inputs to the internal state ma-  
chine. The state machine outputs dictate the function of  
the device. Table 1 lists the device bus operations, the  
inputs and control levels they require, and the resulting  
output. The following subsections describe each of  
these operations in further detail.  
Table 1. Device Bus Operations  
Operation  
CE#  
L
OE#  
L
WE# A16–21 A/DQ0–15 RESET# CLK  
AVD#  
Asynchronous Read  
Write  
H
L
Addr In  
I/O  
H
H
H
L
H/L  
H/L  
H/L  
X
L
H
Addr In  
I/O  
Standby (CE#)  
H
X
X
X
X
X
HIGH Z  
HIGH Z  
X
X
Hardware Reset  
Burst Read Operations  
Load Starting Burst Address  
X
X
L
L
H
L
H
H
Addr In  
X
Addr In  
H
H
Advance Burst to next address with appropriate  
Data presented on the Data Bus  
Burst  
Data Out  
H
Terminate current Burst read cycle  
H
X
X
X
H
H
X
X
HIGH Z  
HIGH Z  
H
L
X
X
Terminate current Burst read cycle via RESET#  
X
Terminate current Burst read cycle and start  
new Burst read cycle  
L
H
H
X
I/O  
H
Legend: L = Logic 0, H = Logic 1, X = Don’t Care.  
ensures that no spurious alteration of the memory  
content occurs during the power transition.  
Requirements for Asynchronous  
Read Operation (Non-Burst)  
To read data from the memory array, the system must  
assert a valid address on A/DQ0–A/DQ15 and  
Requirements for Synchronous (Burst)  
Read Operation  
A16–A21, while AVD# and CE# are at V . WE#  
IL  
The device is capable of four different burst read modes  
(see Table 8): continuous burst read; and 8-, 16-, and  
32-word linear burst reads with wrap around capability.  
should remain at V . Note that CLK must not be  
switching during asynchronous read operations. The  
rising edge of AVD# latches the address, after which  
IH  
the system can drive OE# to V . The data will appear  
IL  
Continuous Burst  
on A/DQ0–A/DQ15. (See Figure 11.) Since the mem-  
ory array is divided into four banks, each bank remains  
enabled for read access until the command register  
contents are altered.  
When the device first powers up, it is enabled for asyn-  
chronous read operation. The device will automatically  
be enabled for burst mode on the first rising edge on  
the CLK input, while AVD# is held low for one clock  
cycle. Prior to activating the clock signal, the system  
should determine how many wait states are desired for  
Address access time (t  
) is equal to the delay from  
ACC  
stable addresses to valid output data. The chip enable  
access time (t ) is the delay from the stable  
the initial word (t  
) of each burst session. The  
CE  
IACC  
addresses and stable CE# to valid data at the outputs.  
system would then write the Set Configuration Register  
command sequence. The system may optionally acti-  
vate the PS mode (see “Power Saving Function”) by  
writing the Enable PS Mode command sequence at  
this time, but note that the PS mode can only be dis-  
abled by a hardware reset. (See “Command Defini-  
The output enable access time (t ) is the delay from  
OE  
the falling edge of OE# to valid data at the output.  
The internal state machine is set for reading array data  
upon device power-up, or after a hardware reset. This  
May 8, 2006 25692A2  
Am29BDS643G  
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