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AM29BDS640GBD9WSI 参数 Datasheet PDF下载

AM29BDS640GBD9WSI图片预览
型号: AM29BDS640GBD9WSI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(4M ×16位) CMOS 1.8伏只同步读/写,突发模式闪存 [64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存内存集成电路
文件页数/大小: 65 页 / 845 K
品牌: SPANSION [ SPANSION ]
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A D V A N C E I N F O R M A T I O N  
AC CHARACTERISTICS  
Program Command Sequence (last two cycles)  
tAVHC  
Read Status Data  
CLK  
tACS  
tAS  
AVD#  
tAH  
(Note 8)  
tAVDP  
Addresses  
Data  
PA  
VA  
VA  
555h  
In  
Complete  
A0h  
PD  
tDS  
tDH  
Progress  
tCAS  
CE#  
tCH  
OE#  
WE#  
tCSW2  
tWP  
tWHWH1  
tWPH  
tWC  
tVCS  
VCC  
Notes:  
1. PA = Program Address, PD = Program Data, VA = Valid  
Address for reading status bits.  
6. The Synchronous programming operation is independent  
of the Set Device Read Mode bit in the Burst Mode  
Configuration Register.  
2. “In progress” and “complete” refer to status of program  
operation.  
7. AVD# must toggle during command sequence unlock cy-  
cles.  
3. A21–A12 are don’t care during command sequence  
unlock cycles.  
8. tAH = 45 ns.  
4. Addresses are latched on the first of either the rising edge  
of AVD# or the active edge of CLK.  
9. CLK must not have an active edge while WE# is at VIL.  
5. Either CS# or AVD# is required to go from low to high in  
between programming command sequences.  
Figure 24. Alternate Synchronous Program Operation Timings  
52  
Am29BDS640G  
October 31, 2002