A D V A N C E I N F O R M A T I O N
DC CHARACTERISTICS
CMOS Compatible
Parameter Description
Test Conditions (Note 1)
Min
Typ.
Max
±1
Unit
µA
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCCmax
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCCmax
±1
µA
CE# = VIL, OE# = VIH, WE# = VIH,
54 MHz
10
8
20
16
mA
mA
ICCB
VCC Active Burst Read Current
CE# = VIL, OE# = VIH, WE# = VIH,
40 MHz
VIO = 1.8 V, OE# = VIH
0.2
0.2
12
10
10
16
5
µA
µA
IIO
VIO Non-active Output
VIO = 3.0 V, OE# = VIH
5 MHz
1 MHz
mA
mA
mA
µA
VCC Active Asynchronous Read
Current (Note 2)
CE# = VIL, OE# = VIH,
WE# = VIH
ICC1
3.5
15
ICC2
ICC3
ICC4
VCC Active Write Current (Note 3) CE# = VIL, OE# = VIH, VPP = VIH
40
10
10
VCC Standby Current (Note 4)
VCC Reset Current
CE# = RESET# = VCC ± 0.2 V
RESET# = VIL, CLK = VIL
0.2
0.2
µA
VCC Active Current
(Read While Write)
ICC5
CE# = VIL, OE# = VIH
25
60
mA
VIO = 1.8 V
VIO = 3.0 V
VIO = 1.8 V
VIO = 3.0 V
–0.5
–0.5
0.2
V
V
V
V
VIL
Input Low Voltage
Input High Voltage
0.4
VIO – 0.2
VIO – 0.4
VIO + 0.2
VIO + 0.4
VIH
IOL = 100 µA, VCC = VCC min
VIO = VIO min
,
VOL
Output Low Voltage
Output High Voltage
0.1
V
V
IOH = –100 µA, VCC = VCC min
,
VOH
VIO – 0.1
VIO = VIO min
VID
Voltage for Accelerated Program
Low VCC Lock-out Voltage
11.5
1.0
12.5
1.4
V
V
VLKO
Note:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Device enters automatic sleep mode when addresses are stable for tACC + 60 ns. Typical sleep mode current is equal to ICC3
.
October 31, 2002
Am29BDS640G
35
SPANSION [ SPANSION ]
